Development Of Diamond Based Power Microelectronics-Reference-Cited by-同舟云学术

Development Of Diamond Based Power Microelectronics

Published:1997 Issue: Volume:483 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Davidson J. L.,Kang W. P.,Gurbuz Y.,Kerns D. V.,Davis L.,Holmes K.,Jiang L.,Pulugurta Venkata,Anurat W.,Howell M.

Abstract

AbstractDiamond based power device structures such as resistor, capacitor, Schottky diode, p-n diode, thyristor, and field emitters are being investigated. Diamond resistors similar to standard thick film components in form and dimension were fabricated of polycrystalline diamond film. Using PECVD (plasma-enhanced chemical vapor deposition) processing to achieve diamond dielectric layers, high power, high energy density capacitors have been built. Despite grain boundaries and defects of polycrystalline diamond film, electronic devices such as field-effecttransistors and Schottky diodes have been developed. We have fabricated micro-patterned microtip arrays with this versatile new diamond technology as electron emitters. This paper will review diamond technology and results of this work.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference20 articles.

1. Structural and electrical characterization of gold/chemically vapor deposited diamond contact

2. 14. Davidson J.L. , Feather D. (MS Thesis), Independent research “Dielectric Properties of Diamond in Capacitors” performed in the Vanderbilt Diamond Technology Program, Vanderbilt University, October 1991.

3. 11. Kang W. P. , Davidson J. L. , Stults T. G. (MS Thesis), Independent research “Electrical Characterization and Analysis of a Metal/Undoped Diamond/ Doped Diamond Schottky Diode”, Vanderbilt University, 1994.

4. 10. Collins A. T. , “Formation of Electric Contacts on Insulating and Semiconducting Diamonds”, Diamond Res., pp. 19–20, 1970.

5. 9. Singer A.T. , “Strategies for CVD diamond cost reduction”, ECS Proceedings, Vol.95–4, pp.582, 1995.