Temperature Control and Temperature Uniformity During Rapid Thermal Processing

Author:

Vandenabeele Peter,Maex Karen

Abstract

AbstractAn overview is given of the major problems in temperature control and uniformity control. For temperature control varying emissivity due to layers, roughness, doping and chamber design are discussed, together with problems due to lamp radiation. The main way to go seems to be in-situ emissivity correction. For uniformity control, the main problems are non-uniform reflector radiation and patteren induced non-uniformity. The solution seems to be the design of a reflective chamber with uniform reflected radiation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference25 articles.

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5. 14. Vandenabeele P. and Maex K. , to be published.

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1. Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor;Journal of Crystal Growth;2000-07

2. Wafer Emissivity In RTP;Advances in Rapid Thermal and Integrated Processing;1996

3. Silicidation and Metallization Issues Using Rapid Thermal Processing;Advances in Rapid Thermal and Integrated Processing;1996

4. Introduction: History and Perspectives of Rapid Thermal Processing;Advances in Rapid Thermal and Integrated Processing;1996

5. Evaluation of a vertical tube concept for RTP;MRS Proceedings;1993

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