Interaction of a 10 eV silicon beam with the Si(111) surface: A molecular dynamics study

Abstract

The interaction of a low-energy silicon beam with a silicon substrate has been simulated. The combined effects of vibrational lattice excitation and of covalent binding have been included for the first time by using a molecular dynamics technique and an empirical potential that accurately describes the covalent Si–Si interactions. A 10 eV silicon beam was directed normal to a silicon (111) substrate. Sticking ratio, penetration depth, substrate structure, and vibrational excitation of the substrate are quantitatively determined. The special features of such low-energy beam deposition relative to thermal deposition processes are discussed.