1. 17We use the values t3 = 3.7 ns, t 1, = 0.4 ns, Dsap = 0.012 cm2s (at 1400 K), and (See Ref. 9).
2. 15In units of δH, this has been evaluated (Ref. 9) to be , where c, (T) is the temperature-dependent specific heat of solid Si.
3. 13This can be seen by differentiation: (d/dt)(lδT) = (IδT) + 1δT = (Dv)/(vβ) - (Dvv)/(v2β) = 0. Physically, an increase in the interface overheating is offset by an accompanying decrease, due to an increased interface velocity, in the length scale /over which the temperature profile decays.
4. 12This quasi-steady-state approximation is valid if the rate of change of this length scale due to changes in interface velocity is slow compared to the interface velocity itself, l = Dv/v2 < u, which is the case here.