Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd films-Reference-Cited by-同舟云学术

Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd films

Published:1987-10 Issue:5 Volume:2 Page:557-567
ISSN:0884-2914
Container-title:Journal of Materials Research
language:en
Short-container-title:J. Mater. Res.

Author:

Colgan E. G.,Li C.-Y.,Mayer J. W.

Abstract

Aluminum films 1–6 kÅ thick deposited on Pt or Pd layers developed voids after annealing between 200 and 275°C. Void formation was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The rate of void growth decreased as the thickness of the initial Al film increased. The driving force appears to be surface tension. The controlling mechanism is diffusion along the Al/Pt or Al/Pd interface made possible by compound formation there.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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