Author:
Hsu Kuei-Fang,Loo Sim,Chen Wei,Uher Ctirad,Hogan Tim,Kanatzidis Mercouri G
Abstract
ABSTRACTAgPb10SbTe12 is one member of the cubic family of materials AgPbmSbTem+2, which adopts NaCl structure where Ag, Pb and Sb atoms occupy the Na site and Te atoms occupy the Cl site. Ingots of this compound were prepared by a solid state reaction for thermoelectric measurements. AgPb10SbTe12 is a narrow band gap semiconductor with Eg∼0.26 eV. In order to optimize the ZT of this member, compositions with deficiency of Ag and Bi-substitution were examined and found to exhibit enhanced power factor at 300 K. The Bi-substituted ingot had ZT∼0.39 at 300 K and ZT∼0.68 at 400 K. Carrier concentration and the mobility measurements are reported.
Publisher
Springer Science and Business Media LLC
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