Large-Area Growth of InGaN/AlGaN Using In Situ Monitoring

Abstract

ABSTRACTA newly developed Metalorganic Chemical Vapor Deposition (MOCVD) reactor for processing batches of seven 50mm wafers per run at deposition temperatures up to 1600°C is introduced. The substrates are individually rotated by means of gas bearings utilizing high purity gas for operation. In order to achieve the maximum uniformity on a wafer the uniformity of the growth temperature was maximized. Pyrometric measurements revealed a temperature uniformity across the susceptor of ±4°C at a temperature of 1300°C. Growth of GaN and GaInN produced uniform layers regarding composition and thickness. On a 50mm diameter wafer the standard deviation for the thickness of a GaN layer is 6% and the standard deviation for the composition of a GaInN layer as determined by photoluminescence is 2%.