New Perspectives in Low Noise Preamplifier Design for Room Temperature Detector Applications

Author:

Manfredi P.F.

Abstract

ABSTRACTAfter reviewing the noise limits in room temperature preamplifiers based on discrete elements, the paper discusses some results obtained with monolithic circuits and the perspectives opened-up by active devices directly integrated on the chip of a silicon detector.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Noise limits of AToM, a128 channel CMOS readout chip in applications with room temperature high granularity detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-02

2. Noise degradation induced by /spl gamma/-rays on P- and N-channel junction field-effect transistors;IEEE Transactions on Nuclear Science;1999-10

3. Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-10

4. Stability of amplification in detectors with integrated electronics;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-10

5. Low noise JFETs for room temperature x-ray detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-10

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