Electrooptic Properties of Pzt thin Films for Image Storage Applications-Reference-Cited by-同舟云学术

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Electrooptic Properties of Pzt thin Films for Image Storage Applications

Published:1991 Issue: Volume:243 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Dimos D.,Schwartz R.W.

Abstract

AbstractThe photocurrent responses, photo-induced changes in hysteresis behavior, and electrooptic (birefringence) effects of sol-gel derived PZT films have been characterized as part of an effort to evaluate ferroelectric films for image storage and processing applications.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Electro‐optic effects of (Pb, La)(Zr, Ti)O3thin films prepared by rf planar magnetron sputtering

2. A review of the effects of ion implantation on the photoferroelectric properties of PLZT ceramics

3. Photoferroelectric effects in PLZT ceramics

4. Photoinduced currents in PZT thin films

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct effect of illumination on ferroelectric properties of lead zirconate titanate thin films;Applied Physics Letters;2001-09-24

2. Photoelectric evaluation of polarization and internal field in PZT thin films;Integrated Ferroelectrics;2001-02

3. Transient photocurrents in lead zirconate titanate thin films;Applied Physics Letters;1998-01-05

4. Photo-Induced Polarization Recovery in PZT Thin Film Capacitors;MRS Proceedings;1996

5. Photo-induced and electrooptic properties of (Pb,La)(Zr,Ti)O3 films for optical memories;Integrated Ferroelectrics;1994-09

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