Pzt Interaction with Metal and Oxides Studied by Rutherford Backscattering Spectrometry-Reference-Cited by-同舟云学术

Pzt Interaction with Metal and Oxides Studied by Rutherford Backscattering Spectrometry

Published:1991 Issue: Volume:243 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Revesz Peter,Li Jian,Szabo Nicholas,Mayer James W.,Caudillo David,Myers Edward R.

Abstract

AbstractAnnealing behavior in oxygen ambients of the of the ferroelectric PZT on Hf and Zr electrodes has been studied in the temperature range of 500-800°C using the 3.045MeV O16(∝,∝)O16 resonance in backscattering spectrometry. Internal oxidation of the buried metal electrode was observed. Oxygen concentration of the PZT film decreases with increasing temperature. Pb loss of the PZT film occurred above 700°C.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Reactions of Zr thin films with SiO2 substrates

2. [7] Li J. , Vizkelethy G. , Revesz P. and Mayer J.W. , Nucl. Instr. and Meth. B to be published

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin films on silicon;Handbook of Silicon Based MEMS Materials and Technologies;2020

2. Role of YSZ buffer layer and PbTiO 3 seed layer in the crystallization of PZT on SiO 2 /Si substrate;Journal of Physics and Chemistry of Solids;2017-05

3. Thin Films on Silicon;Handbook of Silicon Based MEMS Materials and Technologies;2015

4. Process optimisation of a MEMS based PZT actuated microswitch;Microelectronic Engineering;2014-05

5. (111)-Oriented Pb(Zr0.52Ti0.48)O3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition;Journal of Materials Science: Materials in Electronics;2013-06-07