Abstract
ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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1. Rapid thermal processing technology for the 21st century;Materials Science in Semiconductor Processing;1998-12