Creation of Staebler-Wronski Defects at Low Temperatures

Abstract

We extended the kinetics study of light-induced creation of metastable defects in undoped a-Si:H down to T =4.2K. Using band gap light with photocarrier generation rate G0 =3.8x1021cm-3s-1 we find that the change in metastable defect concentration ΔND depends on exposure time te as tme with m = 0.35 ±0.02 at 4.2K, 80K and 300K. The dependence of ΔND on generation rate is G0.44 at 4.2K. The relation between ND and photoconductivity at 300K is nonlinear and not single-valued.