Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance-Reference-Cited by-同舟云学术

Understanding the relationship between Cu2ZnSn(S,Se)4 material properties and device performance

Published:2014-12 Issue:4 Volume:4 Page:159-170
ISSN:2159-6859
Container-title:MRS Communications
language:en
Short-container-title:MRS Communications

Author:

Gershon Talia,Gokmen Tayfun,Gunawan Oki,Haight Richard,Guha Supratik,Shin Byungha

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/mrc.2014.34.pdf

Reference79 articles.

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2. Y.S. Lee, T. Gershon, O. Gunawan, T.K. Todorov, B. Shin, Y. Virgus, and S. Guha: Cu2ZnSnSe4 thin-film solar cells by thermal co-evaporation with 11.6% power conversion efficiency and improved minority carrier diffusion length. Adv. Energy Mater. (2014), DOI: 10.1002/aenm.201401372.

3. T. Kato, H. Hiroi, N. Sakai, S. Muraoka, and H. Sugimoto: Characterization of front and back interfaces on Cu2ZnSnS4 thin-film solar cells. In Proc. of the 27th EU-PVSEC. Vol. 2236 (2012).

4. D.B. Mitzi, O. Gunawan, T.K. Todorov, and D.A.R. Barkhouse: Prospects and performance limitations for Cu-Zn-Sn-S-Se photovoltaic technology. Philos. Trans. R. Soc. A 371, 20110432 (2013).

5. N. Kohara, S. Nishiwaki, Y. Hashimoto, T. Negami, and T. Wada: Electrical properties of the Cu(In,Ga)Se2/MoSe2/Mo structure. Sol. Energy Mater. Sol. Cells 67, 209 (2001).

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