Author:
Lee Samantha,Bravman John C.,Flinn Paul A.,Marieb Tom N.
Abstract
AbstractThe electromigration behavior of pure Al lines passivated with oxides of different thicknesses and passivation deposition temperatures was studied. The initial hydrostatic stress states of the passivated Al lines were modeled with finite element modeling (FEM), and, when possible, measured with X-ray diffraction. Conventional wafer-level electromigration tests showed a clear passivation thickness effect, but no detectable effect of initial stress on electromigration lifetimes. Increasing the passivation thickness increased the electromigration lifetimes, which has been observed by other researchers. However, in a sample set where the Al lines were covered with a thin (0. 1µm) oxide layer, the lifetimes were much longer than expected. Differences in the damage morphology and the failure mechanism between the thin and thicker oxides accounted for this unexpected result.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献