Author:
Chu Wei-Kan,Shao Lin,Liu Jiarui
Abstract
ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.
Publisher
Springer Science and Business Media LLC
Reference24 articles.
1. 22. Shao L. , Zhang J. , Chen J. , Tang D. , Thompson P.E. , Patel S. , Wang X. , Chen H. , Liu J. , and Wei-Kan Chu , Appl. Phys. Lett. to be published.
2. Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
3. Methods of defect-engineering shallow junctions formed by B+-implantation in Si
4. Reduction of boron diffusion in silicon by 1 MeV29Si+irradiation
5. Stability of Ultrashallow Junction Formed by Low-Energy Boron Implant and Spike Annealing