Structural and Electrical Properties of Tin and Carbon Co-Implanted Silicon

Abstract

AbstractThe alloy system Six(SnyC1-y)1-x was investigated. In this work, samples were prepared by co-implantation of tin and carbon ions into silicon wafers with dosage range 1015 − 1016cm−2, followed by rapid thermal annealing. Rutherford backscattering channeling, Auger sputter profiling, and secondary ion mass spectrometry were employed to study the crystallinity, chemical composition and depth profiles. A near perfect crystallinity for 0.5% at. of tin and carbon was achieved. To study the electrical properties in the implanted materials, diode I-V measurements were performed. The data show near ideal p-n junctions in the co-implanted region. This work demonstrates promising features of group IV semiconductor synthesis by ion implantation.