Oxygen Bubble Formation and Transformation During High-Dose Oxygen Implantation and Annealing of Silicon

Author:

Krause S. J.,Seraphin S.,Chen B. L.,Cordts B.,Roitman P.

Abstract

AbstractThe formation of bubbles during high dose implantation of oxygen into silicon, and the subsequent transformation of the bubbles during annealing, were studied with transmission electron microscopy (TEM). There was a threshold for bubble formation at a minimum dose of 0.3 × 1018 oxygen/cm2 and a lower temperature of 550°C. As dose increased the bubbles grew larger and the bubble trails lengthened. However, increasing beam current by a factor of 10 or increasing temperature to 700°C did not affect bubble formation. Bubble evolution during intermediate temperature annealing was also studied using TEM techniques. For 2 hour anneals between 1000 and 1100°C the oxygen bubbles transform into SiO2 particles by first forming a “shell” of SiO2, which then facets, grows inward, and finally completely transforms the bubble into an oxide particle. At temperatures greater than 1100°C the oxide particles dissolve by outdiffusion of the oxygen to the wafer surface.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3