The Contrast of Dislocations in X-Ray Topographs of Homogeneously Bent Silicon Crystals

Abstract

ABSTRACTThe contrast of dislocations in X-ray transmission topographs has been studied as a function of specimen curvature. It has been shown that in the symmetric Laue geometry, contrast differences between Lang and Hirst Curved Crystal topographs are attributable to inhomogeneous bending of the specimen wafers.