Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth-Reference-Cited by-同舟云学术

Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth

Published:1990 Issue: Volume:198 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Murakami Eiichi,Nishida Akio,Etoh Hiroyuki,Nakagawa Kiyokazu,Miyao Masanobu

Abstract

ABSTRACTSelective-area MBE growth of Si1−xGex film is examined using a Si substrate partially covered with SiO2 film. Elimination of misfit dislocations is observed by TEM. Two possible mechanisms in this elimination, limitation of the lateral extension of misfit dislocations, and partial relaxation of the strain at the SiO2 pattern edge, are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

3. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

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