A study of barium strontium titanate thin films for use in bypass capacitors

Author:

Baumert B. A.,Chang L-H.,Matsuda A. T.,Tracy C. J.,Cave N. G.,Gregory R. B.,Fejes P. L.

Abstract

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

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4. Pt/Ti/SiO2/Si substrates

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