Author:
Geddo M.,Guizzetti G.,Pezzuto R.,Polimeni A.,Capizzi M.,Bissiri M.,Baldassarri Höger von Högersthal G.,Gollub D.,Forchel A.
Abstract
ABSTRACTWe report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.
Publisher
Springer Science and Business Media LLC