Growth and characterization of epitaxial films of ZnGeP2.

Abstract

ABSTRACTThermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.