Author:
Karam N.H.,Haven V.,Vernon S.M.,El-Masry N.,Lingunis M.,Haegel N.
Abstract
ABSTRACTSelective area Epitaxy (SE) of high quality GaAs on Si films has been achieved using conventional MOCVD and Atomic Layer Epitaxy (ALE) nucleation techniques. Epitaxial GaAs films were deposited inside windows etch patterned in the oxide coated Si wafers. SE was found to eliminate wafer warpage, reduce film cracking and reduce the tensile stresses for islands less than 200 µm/side. Complete stress relief has been achieved in 10 µm/side islands after oxide removal. Defect reduction techniques have been employed resulting in two orders of magnitude reduction in the dislocation density and excellent surface morphologies. This paper addresses the potential of SE, by the above techniques in improving the quality of the GaAs on Si films.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. Heteroepitaxy on Si I and II;Mater. Res. Soc. (MRS),1986
2. 13. Lingunis M. , Haegel N. and Karam N.H. in preparation.
3. Stress variations and relief in patterned GaAs grown on mismatched substrates
4. Heteroepitaxy on Silicon Fundamental, Structures, and Devices;MRS,1988
5. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献