Dislocation-driven growth of WS2/WSe2 quantum well superlattices

Abstract

The synthesis of two-dimensional lateral heterojunctions with nanoscale characteristic width and sharp interfaces remains challenging. The quantum confinement effects are still difficult to create on 2D materials since widths smaller than 5 nm are necessary for quantum confinement effects and quantum well applications. In this study, we demonstrated the growth of a sub-2-nm tungsten sulfide quantum well array in a monolayer of tungsten selenide, driven by the climb of mismatch dislocation in a heterointerface due to the lattice mismatch. Width-controllable 2D quantum well superlattices are theoretically formed by the mismatch dislocation-driven growth mechanism, according to our analysis. Thus, abundant photonic electronic properties can be obtained in 2D quantum well superlattices formed at varied lateral heterointerfaces, which will support the study of topological insulators and superconductors.