Author:
Rafi-Ul-Islam S. M.,Siu Zhuo Bin,Sahin Haydar,Jalil Mansoor B. A.
Abstract
We study the quantum valley and Hall conductances in silicene coupled to a ferroelectric (FE) layer. The spin orbit interaction in silicene couples the valley, pseudospin, and real spin degrees of freedom resulting in a topological Berry curvature in the system. The finite Berry curvature in turn induces a transverse Hall conductance. In particular, if the Fermi level Ef is within the bulk energy gap, the Hall conductance is quantized to integer multiples of π. We study the quantum spin and valley Hall conductivities (QSH and QVH) as functions of the applied out-of-plane electric field for different values of Ef and temperature. Both conductivities vary linearly as 1/|Ef| when Ef is within the conduction or valence bands but reach a quantized plateau value when Ef is within the bulk gap. Further, by coupling silicene to a FE layer, the QSH and QVH signals can be modulated by means of the coupling strength. This can potentially provide a robust topological memory read-out with distinct binary outputs over a wide temperature range.
Funder
Ministry of Education—Singapore
National University of Singapore
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics,Materials Science (miscellaneous),Biophysics
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献