Resonant THz detection by periodic multi-gate plasmonic FETs

Abstract

We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with distinct carrier concentrations and velocities, giving rise to harmonic behaviors. The resulting frequency spectrum of DC voltage response is composed of “enhanced” and “suppressed” regions. In the enhanced region, the amplitude of response voltage can be enlarged up to ∼100% compared to that in a uniform channel device. The distribution pattern of those regions is directly related to the number of gate sections (Ns). A mapping of response amplitude in a Ns-frequency scale is created, which helps distinguish enhanced/suppressed regions and locate optimal operating parameters.