Highly Efficient and Stable CdZnSeS/ZnSeS Quantum Dots for Application in White Light-Emitting Diode

Abstract

Semiconductor quantum dots (QDs) are a promising luminescent phosphor for next-generation lightings and displays. In particular, QD-based white light-emitting diodes (WLEDs) are considered to be the candidate light sources with the most potential for application in displays. In this work, we synthesized quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs with high bright emission intensity. The QDs show good thermal stability by performing high temperature-dependent experiments that range from 295 to 433 K. Finally, the WLED based on the CdZnSeS/ZnSeS QDs exhibits a luminous efficiency (LE) of 28.14 lm/W, an external quantum efficiency (EQE) of 14.86%, and a warm bright sunlight close to the spectrum of daylight (Commission Internationale de l'éclairage (CIE) coordinates 0.305, 0.371). Moreover, the photoluminescence (PL) intensity, LE, EQE, and correlated color temperature (CCT) of as-prepared QD WLED remained relatively stable with only slight changes in the luminescence stability experiment.