Comparative investigation of recombination characteristics in proton and electron irradiated Si structures
Author:
Publisher
Lithuanian Academy of Sciences
Subject
General Physics and Astronomy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microwave photoconductance decay measurements of n- and p-type silicon irradiated with neutrons and protons;Radiation Physics and Chemistry;2021-08
2. Investigation of the switching and carrier recombination characteristics in the proton irradiated and thermally annealed Si PIN diodes;Lithuanian Journal of Physics;2010
3. Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures;Lithuanian Journal of Physics;2008
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