Non-stoichiometric AlOxFilms Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics-Reference-Cited by-同舟云学术

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Non-stoichiometric AlOxFilms Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics

Published:2012-07-20 Issue:7 Volume:33 Page:2207-2212
ISSN:0253-2964
Container-title:Bulletin of the Korean Chemical Society
language:en
Short-container-title:Bulletin of the Korean Chemical Society

Author:

Lee Sun-Sook,Lee Eun-Seok,Kim Seok-Hwan,Lee Byung-Kook,Jeong Seok-Jong,Hwang Jin-Ha,Kim Chang-Gyoun,Chung Taek-Mo,An Ki-Seok

Publisher

Korean Chemical Society

Subject

General Chemistry

Link

http://ocean.kisti.re.kr/downfile/crosscheck/chemical/JAKO201222340310843.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Point defects in stoichiometric and nonstoichiometric metal oxides for modern microelectronics;Metal Oxide Defects;2023

2. Selective kinetic growth and role of local coordination in forming Al2TiO5-based coatings at lower temperatures;Materials Advances;2021

3. Al 2 O 3 thin films prepared by plasma-enhanced chemical vapor deposition of dimethylaluminum isopropoxide;Thin Solid Films;2017-11

4. High temperature behavior of functional TiAlBSiN nanocomposite coatings;Surface and Coatings Technology;2016-11

5. Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices;Journal of the Korean Physical Society;2016-08

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