Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping

Abstract

Resistive random–access memory (RRAM) for neuromorphic systems has received significant attention because of its advantages, such as low power consumption, high–density structure, and high–speed switching. However, variability occurs because of the stochastic nature of conductive filaments (CFs), producing inaccurate results in neuromorphic systems. In this article, we fabricated nitrogen–doped tantalum oxide (TaOx:N)–based resistive switching (RS) memory. The TaOx:N–based device significantly enhanced the RS characteristics compared with a TaOx–based device in terms of resistance variability. It achieved lower device–to–device variability in both low-resistance state (LRS) and high–resistance state (HRS), 8.7% and 48.3% rather than undoped device of 35% and 60.7%. Furthermore, the N–doped device showed a centralized set distribution with a 9.4% variability, while the undoped device exhibited a wider distribution with a 17.2% variability. Concerning pulse endurance, nitrogen doping prevented durability from being degraded. Finally, for synaptic properties, the potentiation and depression of the TaOx:N–based device exhibited a more stable cycle–to–cycle variability of 4.9%, compared with only 13.7% for the TaOx–based device. The proposed nitrogen–doped device is more suitable for neuromorphic systems because, unlike the undoped device, uniformity of conductance can be obtained.