Change in Interface Characteristics of ITO Modified with n-decyltrimethoxysilane

Abstract

Herein, we examined changes in the interfacial properties of organic light-emitting diodes when n-decyltrimethoxysilane (CH3SAM) was deposited on the surface of an indium tin oxide (ITO) electrode for various deposition times. It was revealed that the interfacial properties varied with deposition time. As the latter increased, so did the measured value of the contact angle, and ITO substrate exhibited a lower wettability. The contact angle measurements for bare ITO at 1, 10, 30, and 90 min were 57.41°, 63.43°, 73.76°, 81.47°, respectively, and the highest value obtained was 93.34°. In addition, the average roughness and work function of the ITO were measured using atomic force microscopy and X-ray photoelectron spectroscopy. As the deposition time of CH3SAM on the ITO substrates increased, it was evident that the former was well aligned with the latter, improving surface modification. The work function of CH3SAM, modified on the ITO substrates, improved by approximately 0.11 eV from 5.05–5.16 eV. The introduction of CH3SAM to the ITO revealed the ease of adjustment of the characteristics of ITO substrates.