Partial and Total Substitution of Zn by Mg in the Cu2ZnSnS4 Structure

Abstract

Cu 2 ZnSnS 4 (CZTS) is a quaternary semiconductor that has emerged as a promising component in solar absorber materials due to its excellent optical properties such as band-gap energy of ca. 1.5 eV and significant absorption coefficient in the order of 10 4 cm − 1 . Nevertheless, the energy conversion efficiency of CZTS-based devices has not reached the theoretical limits yet, possibly due to the existence of antisite defects (such as Cu Zn or Zn Cu ) and secondary phases. Based on electronic similarities with Zn, Mg has been proposed for Zn substitution in the CZTS structure in the design of alternative semiconductors for thin-film solar cell applications. This work aims to study the properties of the CZTS having Mg incorporated in the structure replacing Zn, with the following stoichiometry: x = 0, 0.25, 0.5, 0.75, and 1 in the formula Cu 2 Zn 1 − x Mg x SnS 4 (CZ-MTS). The semiconductor was prepared by the hot injection method, using oleylamine (OLA) as both surfactant and solvent. The presence and concentration of incorporated Mg allowed the fine-tuning of the CZ-MTS semiconductor’s structural and optical properties. Furthermore, it was observed that the inclusion of Mg in the CZTS structure leads to a better embodiment ratio of the Zn during the synthesis, thus reducing the excess of starting precursors. In summary, CZ-MTS is a promising candidate to fabricate high efficient and cost-effective thin-film solar cells made of earth-abundant elements.