Through-Wire Microstrip-to-Empty-Substrate-Integrated-Waveguide Transition at Ka-Band

Abstract

The advantages of the Substrate-Integrated Waveguide (SIW) in terms of low profile, integration with Printed Circuit Board (PCB) and low cost are maintained by the Empty Substrate-Integrated Waveguide (ESIW). Moreover, as the dielectric fill is avoided, other advantages are also added: resonators with higher quality factor and lower insertion losses. Since 2014, when it was proposed, several devices for X-band to Ka-band applications have been accurately designed and manufactured. In this way, transitions are one of the most important components, as they allow the connection between the ESIW and other planar transmision lines such as microstrip. To accomplish this aim, different transitions have been proposed in the literature: based on sharp dielectric tapers combining metallized and non-metallized parts, which increases the manufacture complexity; with a broadened ESIW section, that is less complex at the cost of increasing reflection and radiation losses due to the abrupt discontinuity; based on tapered artificial dielectric slab matrix, more difficult to mechanize; using a tapered microstrip transition, with high radiation losses; and even transitions for multilayer devices. Among all the transitions, the most versatile one is the through-wire transition, as microstrip and ESIW can be implemented in different layers and allows any feeding angle between the microstrip line and the ESIW. In this paper the through-wire transition has been properly validated at Ku- and Ka-bands. Moreover, a back-to-back transition has been accurately manufactured in Ka-band with measured insertion losses lower than 3.7 dB and return losses higher that 11.7 dB, concluding that the transition is not frequency dependent.