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Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure

  • Published:2011-03-09 Issue:3 Volume:11 Page:3067-3077
  • ISSN:1424-8220
  • Container-title:Sensors
  • language:en
  • Short-container-title:Sensors

Author:

Abidin Mastura Shafinaz Zainal,Hashim Abdul Manaf,Sharifabad Maneea Eizadi,Rahman Shaharin Fadzli Abd,Sadoh Taizoh

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review on Gallium Nitride for Liquid Sensors: Fabrications to Applications;ACS Applied Electronic Materials;2024-05-10

2. Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions;Materials Science in Semiconductor Processing;2024-05

3. Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications;Micromachines;2024-02-28

4. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

5. Influence of graded back barrier on AlGaN/GaN HEMT and HEMT-based sensor;Third International Conference on Sensors and Information Technology (ICSI 2023);2023-05-15
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