Influence of the Carrier Selective Front Contact Layer and Defect State of a-Si:H/c-Si Interface on the Rear Emitter Silicon Heterojunction Solar Cells

Abstract

In this research, simulations were performed to investigate the effects of carrier selective front contact (CSFC) layer and defect state of hydrogenated amorphous silicon passivation layer/n-type crystalline silicon interface in silicon heterojunction (SHJ) solar cells employing the Automat for Simulation of hetero-structure (AFORS-HET) simulation program. The results demonstrated the effects of band offset determined by band bending at the interface of the CSFC layer/passivation layer. In addition, the nc-SiOx: H CSFC layer not only reduces parasitic absorption loss but also has a tunneling effect and field effect passivation. Furthermore, it increased the selectivity of contact. In the experimental cell, nc-SiOx:H was used as the CSFC layer, where efficiency of the SHJ solar cell was 22.77%. Our investigation shows that if a SiOx layer passivation layer is used, the device can achieve efficiency up to 25.26%. This improvement in the cell is mainly due to the enhancement in open circuit voltage (Voc) because of lower interface defect density resulting from the SiOx passivation layer.