Abstract
X-ray diffuse scattering from the Ca3NbGa3Si2O14 (CNGS) crystal was measured with a triple axis X-ray diffractometer under the conditions of an external electric field. It is found that the nature of the intensity distribution of the asymmetrical part of diffuse scattering depends on the value of the applied electric field. This phenomenon is apparently associated with different piezoelectric characteristics of defect regions and the rest of the single crystal.
Subject
General Materials Science
Reference15 articles.
1. Wooster, W.A. Diffuse X-ray Reflections from Crystals, 1962.
2. Krivoglaz, M.A. X-ray and Neutron Diffraction in Nonideal Crystals, 1996.
3. Larson, B.C. X-ray Diffuse Scattering Near Bragg Reflections for The Study of Clustered Defects in Crystalline Materials. Diffuse Scattering and the Fundamental Properties of Materials, 2009.
4. Calculation of diffuse scattering near Bragg reflections from coherent precipitates;Iida;J. Mater. Res.,1988
5. High resolution X-ray diffraction study of proton irradiated silicon crystals;Smirnov;Mod. Electron. Mater.,2016