Effect of a-SiCxNy:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr3 Quantum Dots

Author:

Lin Zewen12,Lin Zhenxu1,Guo Yanqing1,Wu Haixia1,Song Jie1,Zhang Yi1,Zhang Wenxing1ORCID,Li Hongliang1,Hou Dejian1,Huang Rui1

Affiliation:

1. School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China

2. National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Abstract

The effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH4, CH4, and NH3 as the precursors, on the stability and photoluminescence of CsPbBr3 quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr3 QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr3 QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr3 QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr3 QD thin films, thus holding potential for future developments in optoelectronic devices.

Funder

Guangdong Basic and Applied Basic Research Foundation

Project of Guangdong Province Key Discipline Scientific Research Level Improvement

Special Innovation Projects of Guangdong Provincial Department of Education

Program of the Hanshan Normal University

Science and Technology Planning Projects of Chaozhou

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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