Accurate Nonstandard Path Integral Models for Arbitrary Dielectric Boundaries in 2-D NS-FDTD Domains

Author:

Ohtani Tadao1,Kanai Yasushi2ORCID,Kantartzis Nikolaos V.3ORCID

Affiliation:

1. Independent Researcher, Asahikawa 070-0841, Japan

2. Department of Engineering, Faculty of Engineering, Niigata Institute of Technology, Kashiwazaki 945-1195, Japan

3. School of Electrical and Computer Engineering, Faculty of Engineering, Aristotle University of Thessaloniki, 541 24 Thessaloniki, Greece

Abstract

An efficient path integral (PI) model for the accurate analysis of curved dielectric structures on coarse grids via the two-dimensional nonstandard finite-difference time-domain (NS-FDTD) technique is introduced in this paper. In contrast to previous PI implementations of the perfectly electric conductor case, which accommodates orthogonal cells in the vicinity of curved surfaces, the novel PI model employs the occupation ratio of dielectrics in the necessary cells, providing thus a straightforward and instructive means to treat an assortment of practical applications. For its verification, the reflection from a flat plate and the scattering from a cylinder using the PI model are investigated. Results indicate that the featured methodology can enable the reliable and precise modeling of arbitrarily shaped dielectrics in the NS-FDTD algorithm on coarse grids.

Publisher

MDPI AG

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