Control of EMI in High-Technology Nano Fab by Exploitation Power Transmission Method with Ideal Permutation

Abstract

There are many high-power electrical cables around and within semiconductor foundries. These cables are the source of extremely low-frequency (ELF < 300 Hz) magnetic fields that affect the tools which operate by the function of electronic beams. Miss operation (MO) happens because the ELF magnetic fields induce beam shift during the measurement or process for cutting-edge chips below 40 nm. We present the optimal permutation of power transmission lines to reduce electromagnetic influence in high-technology nano fabs. In this study, the magnetic field was reduced using a mirror array power cable system, and simulation results predicted the best permutations to decrease the electromagnetic interference (EMI) value to below 0.4 mG in a working space without any shielding. Furthermore, this innovative method will lower the cost of high-technology nano fabs, especially for the 28 nm process. The motivation behind this paper is to find the ideal permutation of power transmission lines with a three-phase, four-cable framework to decrease the EMI in high-technology nano fabs. In this study, the electromagnetic interference was diminished using the ideal-permutation methodology without investing or using additional energy, labor, or apparatus. Moreover, this advanced methodology will help increase the effectiveness and reduce the costs of nano fabs. The mathematical and experimental results of the study are presented with analysis.