Abstract
Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we conducted a numerical study into the role of the n-type layers in CIG(SSe)2 heterojunction solar cells, specifically concerning the maximum open-circuit voltage of the devices. In the first part of the study, we derived a new ideal open-circuit voltage equation for a thin-film heterojunction solar cell by taking into account the current contribution from the depletion region. The accuracy of the new equation was validated through a simulation model in the second part of the study. Another simulation model was also used to clarify the design rules of the n-type layer in a wide band gap CIG(SSe)2 solar cell. Our work stressed the importance of a positive conduction band offset on the n-/p-type interface, through the use of a low electron affinity n-type material for a solar cell with a high open-circuit voltage. Through a precise selection of the window layer material, a buffer-free CIG(SSe)2 design is sufficient to fulfill such conditions. We also proposed the specific roles of the n-type layer, i.e., as a passivation layer and selective electron contact, in the operation of CIGS2 solar cells.
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous)
Cited by
3 articles.
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