SnS2 as a Saturable Absorber for Mid-Infrared Q-Switched Er:SrF2 Laser

Author:

Li Chun1,Yang Qi1,Zu Yuqian1,Din Syed Zaheer Ud1,Yue Yu2,Zhai Ruizhan1,Jia Zhongqing1

Affiliation:

1. International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China

2. School of Science, Shandong Jianzhu University, Jinan 250101, China

Abstract

Two-dimensional (2D) materials own unique band structures and excellent optoelectronic properties and have attracted wide attention in photonics. Tin disulfide (SnS2), a member of group IV-VI transition metal dichalcogenides (TMDs), possesses good environmental optimization, oxidation resistance, and thermal stability, making it more competitive in application. By using the intensity-dependent transmission experiment, the saturable absorption properties of the SnS2 nanosheet nearly at 3 μm waveband were characterized by a high modulation depth of 32.26%. Therefore, a few-layer SnS2 was used as a saturable absorber (SA) for a bulk Er:SrF2 laser to research its optical properties. When the average output power was 140 mW, the passively Q-switched laser achieved the shortest pulse width at 480 ns, the optimal single pulse energy at 3.78 µJ, and the highest peak power at 7.88 W. The results of the passively Q-switched laser revealed that few-layer SnS2 had an admirable non-linear optical response at near 3 μm mid-infrared solid-state laser.

Funder

Natural Science Foundation of Shandong Province of China

National Natural Science Foundation of China

Qilu University of Technology (Shandong Academy of Sciences), Education and Industry Integration and Innovation Pilot

Key R&D Program of Shandong Province

Major innovation projects for integrating science, education & industry of Qilu University of Technology

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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