Influence of Accidental Impurities on the Spectroscopic and Luminescent Properties of ZnWO4 Crystal

Author:

Subbotin Kirill12ORCID,Titov Anatolii12,Solomatina Victoria23,Khomyakov Andrew2,Pakina Ekaterina2,Yakovlev Viktor4,Valiev Damir4ORCID,Zykova Marina2,Kuleshova Kristina12,Didenko Yana12,Lis Denis1,Grishechkin Mikhail2,Batygov Sergei1,Kuznetsov Sergei1ORCID,Avetissov Igor2ORCID

Affiliation:

1. Prokhorov General Physics Institute of the Russian Academy of Sciences, 119991 Moscow, Russia

2. Department of Chemistry and Technology of Crystals, Mendeleev University of Chemical Technology, 125047 Moscow, Russia

3. Zelinsky Institute of Organic Chemistry of the Russian Academy of Sciences, 119991 Moscow, Russia

4. School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Lenin Avenue 30, 634050 Tomsk, Russia

Abstract

Special techniques for deep purification of ZnO and WO3 have been developed in this work. A ZnWO4 single crystal has been grown by the Czochralski method using purified ZnO and WO3 chemicals, along with the ZnWO4 crystal-etalon, which has been grown at the same conditions using commercially available 5N ZnO and WO3 chemicals. The actual accidental impurities compositions of both the initial chemicals and the grown crystals have been measured by inductively coupled plasma mass-spectrometry. A complex of comparative spectroscopic studies of the crystals has been performed, including optical absorption spectra, photo-, X-ray-, and cathodoluminescence spectra and decay kinetics, as well as the photoluminescence excitation spectra. The revealed differences in the measured properties of the crystals have been analyzed in terms of influence of the accidental impurities on these properties.

Funder

the Ministry of Science and High Education of the Russian Federation

Publisher

MDPI AG

Subject

General Materials Science

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