Conclusive Model-Fit Current–Voltage Characteristic Curves with Kink Effects

Author:

Yang Hsin-Chia1,Chi Sung-Ching1

Affiliation:

1. Department of Electronic Engineering, Ming Hsin University of Science and Technology, Hsinchu 30401, Taiwan

Abstract

Current–voltage characteristic curves of NFinFET are presented and fitted with modified current–voltage (I-V) formulas, where the modified term in the triode region is demonstrated to be indispensable. In the as-known I-V formula, important parameters need to be determined to make both the measured data and the fitting data as close as possible. These parameters include kN (associated with the sizes of the transistor and mobility), λ (associated with early voltage), and Vth (the threshold voltage). The differences between the measured data and the fitting data vary with the applied source–drain bias, proving that the mobility of the carriers is not consistently constant. On the other hand, a modified formula, called the kink effect factor, is negatively or positively added, simulating solitary heat waves or lattice vibration, which disturb the propagation of carriers and thus influence the source–drain current (IDS). The new statistical standard deviations (δ) are then found to be effectively suppressed as the kink effect is taken into account.

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Reference20 articles.

1. Room to high temperature measurements of flexible SOI FinFETs with sub-20-nm fins;Diab;IEEE Trans. Electron. Devices,2014

2. Wang, F., Xie, Y., Bernstein, K., and Luo, Y. (2006, January 2–3). Dependability analysis of nano-scale FinFET circuits. Proceedings of the IEEE Computer Society Annual Symposium on Emerging VLSI Technologies and Architectures (ISVLSI’06), Karlsruhe, Germany.

3. Sub-50 nm P-channel FinFET;Huang;IEEE Trans. Electron. Devices,2001

4. On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II-Effect of Drain Voltage;Rudenko;IEEE Trans. Electron. Devices,2011

5. Self-heating effects and analog performance optimization of Fin-type field-effect transistors;Takahashi;Jpn. J. Appl. Phys.,2013

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3