Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices-Reference-Cited by-同舟云学术

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

Published:2024-08-11 Issue:8 Volume:15 Page:1026
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Yu Hao¹,Zhou Wei¹,Liu Hongxia¹^ORCID,Wang Shulong¹^ORCID,Chen Shupeng¹,Liu Chang¹²^ORCID

Affiliation:

1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, China

2. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China Electronic Product Relibility and Environmental Testing Research Institute, Guangzhou 511370, China

Abstract

The working environment of electronic devices in the aerospace field is harsh. In order to ensure the reliable application of the SOI FinFET, the total ionizing dose (TID) and hot carrier injecting (HCI) reliability of an SOI FinFET were investigated in this study. First, the influence of TID on the device was simulated. The results show that TID causes the threshold voltage to decrease and the off-state current and subthreshold swing to increase. TID causes more damage to the device at high temperature and also reduces the saturation drain current of the device. HCI causes the device threshold voltage to increase and the saturation drain current to decrease. The HCI is more severe at high temperatures. Finally, the coupling effects of the two were simulated, and the results show that the two effects cancel each other out, and the degradation of various electrical characteristic parameters is different under different coupling modes.

Funder

National Natural Science Foundation of China

Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/8/1026/pdf

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