Affiliation:
1. Key Laboratory of Electronics Engineering, Heilongjiang University, Harbin 150080, China
2. School of Electronic Information and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China
Abstract
YSZ is a promising material for resistive memory devices due to its high concentration of oxygen vacancies, which provide the high anion migration rates crucial for the manifestation of resistance switching in metal oxides. Therefore, investigating the ionic conductivity of YSZ is an important issue. The ionic conductivity and thermal stability of 8 mol% YSZ were studied using the theories and methods of solid-state physics and physical chemistry. The impact of anomalous atomic vibrations on the material was also explored, and the variation in the ion vibration frequency, electrical conductivity, and thermal stability coefficient of electrical conductivity with temperature was obtained. The results show that the ion conductivity of an 8 mol% YSZ solid electrolyte increases nonlinearly with temperature, with a smaller increase at lower temperatures and a larger increase at higher temperatures. Considering the anharmonic effect of ion vibrations, the electrolyte conductivity is higher than the result of the harmonic approximation, and the anharmonic effect becomes more significant at higher temperatures. Our research fills the gap in the current literature regarding the theoretical non-harmonic exploration of the ion conductivity and thermal stability factor of YSZ solid electrolytes. These results provide valuable theoretical guidance for the development and application of high-performance YSZ resistive memory devices in high-temperature environments.
Funder
Science and Technology Research Program of Chongqing Municipal Education Commission
Subject
General Materials Science
Cited by
3 articles.
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