Temperature-Dependent Residual Stresses and Thermal Expansion Coefficient of VO2 Thin Films

Author:

Tien Chuen-Lin12ORCID,Chiang Chun-Yu2ORCID,Wang Ching-Chiun3,Lin Shih-Chin3

Affiliation:

1. Department of Electrical Engineering, Feng Chia University, Taichung 40724, Taiwan

2. Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan

3. Mechanical and Systems Research Lab, Industrial Technology Research Institute, Hsinchu 310401, Taiwan

Abstract

This study aims to investigate the thermomechanical properties of vanadium dioxide (VO2) thin films. A VO2 thin film was simultaneously deposited on B270 and H-K9L glass substrates by electron-beam evaporation with ion-assisted deposition. Based on optical interferometric methods, the thermal–mechanical behavior of and thermal stresses in VO2 films can be determined. An improved Twyman–Green interferometer was used to measure the temperature-dependent residual stress variations of VO2 thin films at different temperatures. This study found that the substrate has a great impact on thermal stress, which is mainly caused by the mismatch in the coefficient of thermal expansion (CTE) of the film and the substrate. By using the dual-substrate method, thermal stresses in VO2 thin films from room temperature to 120 °C can be evaluated. The thermal expansion coefficient is 3.21 × 10−5 °C−1, and the biaxial modulus is 517 GPa.

Funder

National Science and Technology of Council

Feng Chia University

Publisher

MDPI AG

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