Binding Energies and Optical Properties of Power-Exponential and Modified Gaussian Quantum Dots

Author:

Alauwaji Ruba Mohammad12,Dakhlaoui Hassen23,Algraphy Eman23,Ungan Fatih45ORCID,Wong Bryan M.6ORCID

Affiliation:

1. Physics Department, College of Science, Qassim University, Qassim 51452, Saudi Arabia

2. Physics Department, College of Science of Dammam, Imam Abdulrahman Bin Faisal University, Dammam 34212, Saudi Arabia

3. Nanomaterials Technology Unit, Basic and Applied Scientific Research Center (BASRC), Physics Department, College of Science of Dammam, Imam Abdulrahman Bin Faisal University, Dammam 34212, Saudi Arabia

4. Department of Physics, Faculty of Science, Sivas Cumhuriyet University, Sivas 58140, Turkey

5. Nanophotonics Research and Application Center, Sivas 58070, Turkey

6. Materials Science & Engineering Program, Department of Chemistry, and Department of Physics & Astronomy, University of California-Riverside, Riverside, CA 92521, USA

Abstract

We examine the optical and electronic properties of a GaAs spherical quantum dot with a hydrogenic impurity in its center. We study two different confining potentials: (1) a modified Gaussian potential and (2) a power-exponential potential. Using the finite difference method, we solve the radial Schrodinger equation for the 1s and 1p energy levels and their probability densities and subsequently compute the optical absorption coefficient (OAC) for each confining potential using Fermi’s golden rule. We discuss the role of different physical quantities influencing the behavior of the OAC, such as the structural parameters of each potential, the dipole matrix elements, and their energy separation. Our results show that modification of the structural physical parameters of each potential can enable new optoelectronic devices that can leverage inter-sub-band optical transitions.

Publisher

MDPI AG

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