Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

Author:

Zheng Yueqian1,Xu Tao1,Wang Xuan1,Sun Zhi1,Han Bai1ORCID

Affiliation:

1. Department of Electric Engineering, Harbin University of Science and Technology, 52 Xuefu Rd., Nangang, Harbin 150080, China

Abstract

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10–107 Hz) and high-frequency (0.5–2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Reference21 articles.

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