Abstract
Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-driven carrier conductance is discussed with a direct comparison to nanowires of a single crystal phase and a binary (InAs) alloy. Our analysis of electronic structures presents solid evidences that the strong electron conductance and its sensitivity to external tensile stress are due to the phosphorous atoms in a Wurtzite phase, and the effect of a Zincblende phase is not remarkable. With several solid connections to recent experimental studies, this work can serve as a sound framework for understanding of the unique piezoresistive characteristics of InAsP nanowires.
Funder
Korea Institute of Science and Technology Information
Subject
Chemistry (miscellaneous),Analytical Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Molecular Medicine,Drug Discovery,Pharmaceutical Science
Reference44 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. Remarkable and Crystal-Structure-Dependent Piezoelectric and Piezoresistive Effects of InAs Nanowires
3. Structural and electronic property calculations of InxGa1-xAs alloy based on all electron potentials from first-principle theory;Pandey;Indian J. Pure Appl. Phys.,2016
4. Mechanical Behaviors of Semiconductor Nanowires;Chen,2016
5. A wearable and highly sensitive pressure sensor with ultrathin gold nanowires
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献