Circularly Polarized Ultra-Wideband Antenna for Uni-Traveling-Carrier Photodiode Terahertz Source

Author:

Li Qi1,Nie Chuang1,Liu Zihao1ORCID,Zhou Xin1,Cheng Xiaohe1,Liang Song2,Yao Yuan1

Affiliation:

1. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Abstract

This paper proposes a circularly polarized ultra-wideband (UWB) antenna for a Uni-Traveling-Carrier Photodiode (UTC-PD) to meet the growing demand for bandwidth and polarization diversity in terahertz (THz) communication. In the design of the UTC-PD integrated antenna, the planar electrodes of the chip are directly integrated with the antenna to simplify the integration process. However, this integration introduces new problems, such as asymmetry inside the spiral antenna, which leads to a deterioration in the corresponding high-frequency performance. To address this issue, the antenna’s structure is optimized, and a lens is integrated to enhance directivity and eliminate surface waves. As a result, the proposed antenna achieves a 100–1500 GHz (175%) impedance bandwidth and a 150–720 GHz (131%) axial ratio bandwidth for the UTC-PD. The maximum gain of the antenna is 21.05 dBi at 1 THz.

Funder

BUPT innovation and entrepreneurship

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference18 articles.

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3. Sensing and non-destructive testing applications of terahertz spectroscopy and imaging systems: State-of-the-art and state-of-the-practice;Nsengiyumva;IEEE Trans. Instrum. Meas.,2023

4. Experimental comparison of UTC-and PIN-photodiodes for continuous-wave terahertz generation;Nellen;J. Infrared Millim. Terahertz Waves,2020

5. Photoresponse dynamics of uni-travelling-carrier and conventional pin-photodiodes;Ploog;Compound Semiconductors 1999: Proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors, Berlin, Germany, 23–26 August 1999,2000

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